Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Process and apparatus for the growth of films of silicides of refractory metals and films obtained by this process

Process and apparatus for the growth of films of silicides of refractory metals and films obtained by this process

US Patent 4643914 · Granted Feb 17, 1987

Assignee

No assignee recorded.

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Cyclic epitaxy process to form air gap isolation for a bipolar transistor2019
Ultra-porous photocatalytic material, method for the manufacture and the uses th2016
Method for fabricating NMOS and PMOS transistors on a substrate of the SOI, in p2016
Method for producing a capacitor including an array of nanocapacitors2015
Process for producing at least one deep trench isolation2015
Method for depositing a silicon oxide layer of same thickness on silicon and on 2013
Single-crystal semiconductor layer with heteroatomic macro-network2012
Method for manufacturing a structure of semiconductor-on-insulator type2012
Single-crystal semiconductor layer with heteroatomic macronetwork2011
Electronic component manufacturing method2011
Single-crystal layer on a dielectric layer2010
Single-crystal layer on a dielectric layer2009