Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for fabricating NMOS and PMOS transistors on a substrate of the SOI, in particular FDSOI, type and corresponding integrated circuit

Method for fabricating NMOS and PMOS transistors on a substrate of the SOI, in particular FDSOI, type and corresponding integrated circuit

US Patent 9412589 · Granted Aug 9, 2016

Estimated economic value: $3,059,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Nanopore transistor for biosensing2025
Method for forming a bioFET sensor including semiconductor fin or nanowire2023
Method and system for geolocating a terminal in range of a transmitting device o2022
Cyclic epitaxy process to form air gap isolation for a bipolar transistor2019
Electronic chip manufacturing method2018
Method for the formation of different gate metal regions of MOS transistors2016
Insulation wall between transistors on SOI2016
Process for producing at least one deep trench isolation2015
Insulation wall between transistors on SOI2015
Method for forming the gate insulator of a MOS transistor2014
Reagents and methods for the formation of disulfide bonds and the glycosylation 2014
Method for depositing a silicon oxide layer of same thickness on silicon and on 2013