Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of fabricating magneto-resistive random access memory (MRAM)

Method of fabricating magneto-resistive random access memory (MRAM)

US Patent 12262642 · Granted Mar 25, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Transistor including a hydrogen-diffusion barrier and methods for forming the sa2025
Integrated circuit having angled conductive feature2025
Thin film transistor featuring variable thickness glue layer with tapered end2025
Method for forming a 3-D semiconductor memory structure comprising horizontal an2025
Thin film transistor including a compositionally-modulated active region and met2025
Bipolar selector with independently tunable threshold voltages2025
Memory device and method for fabricating the same2025
Memory cell having source or drain electrode with kink portion, memory array and2025
Three-dimensional memory device with word lines extending through sub-arrays, se2025
Ferroelectric memory device and method of forming the same2025
Access transistors in a dual gate line configuration and methods for forming the2025
3D lateral patterning via selective deposition for ferroelectric devices2025