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Home › Double gate metal-ferroelectric-metal-insulator-semiconductor field-effect transistor (MFMIS-FET) structure

Double gate metal-ferroelectric-metal-insulator-semiconductor field-effect transistor (MFMIS-FET) structure

US Patent 12150309 · Granted Nov 19, 2024

Estimated economic value: $19,112,000 ⓘ

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