Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers

Methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers

US Patent 12131913 · Granted Oct 29, 2024

Estimated economic value: $69,228,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Processes for depositing SiB films2025
Ion implantation for reduced hydrogen incorporation in amorphous silicon2025
Ion implantation for reduced hydrogen incorporation in amorphous silicon2025
PECVD of SiBN thin films with low leakage current2025
Forming a doped hardmask2025
Remote capacitively coupled plasma deposition of amorphous silicon2025
Methods of forming thermally stable carbon film2025
Uniform in situ cleaning and deposition2025
Integration processes utilizing boron-doped silicon materials2025
Integration processes utilizing boron-doped silicon materials2025
Methods and apparatus for minimizing substrate backside damage2025
Deposition of conformal and gap-fill amorphous silicon thin-films2025