Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Etching composition and method for selectively removing silicon nitride during manufacture of a semiconductor device

Etching composition and method for selectively removing silicon nitride during manufacture of a semiconductor device

US Patent 12110435 · Granted Oct 8, 2024

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Photoresist remover2025
Photoresist remover2025
Composition comprising three alkanolamines and a hydroxylamine for removing etch2025
Composition comprising three alkanolamines and a hydroxylamine for removing etch2025
Composition comprising three alkanolamines and a hydroxylamine for removing etch2025
Etching composition and method for selectively removing silicon nitride during m2025
Etching composition and method for selectively removing silicon nitride during m2025
Etching composition and method for selectively removing silicon nitride during m2025
Etching composition and method for selectively removing silicon nitride during m2025
Etching composition and method for selectively removing silicon nitride during m2025
Co/Cu selective wet etchant2024
Co/Cu selective wet etchant2024