Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Memory device having 2-transistor vertical memory cell and shield structures

Memory device having 2-transistor vertical memory cell and shield structures

US Patent 12080331 · Granted Sep 3, 2024

Estimated economic value: $19,072,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Vertically stacked storage nodes and access devices with horizontal access lines2025
Memory device having tiers of 2-transistor memory cells and charge storage struc2025
Memory device having tiers of 2-transistor memory cells and charge storage struc2025
Two transistor cells for vertical three-dimensional memory2025
Transistors, array of transistors, and array of memory cells individually compri2025
Memory device having tiers of 2-transistor memory cells2025
Memory device having tiers of 2-transistor memory cells2025
Memory device having tiers of 2-transistor memory cells2025
Memory device having tiers of 2-transistor memory cells2025
Microelectronic devices, related electronic systems, and methods of forming micr2025
Ferroelectric transistors and assemblies comprising ferroelectric transistors2025
Ferroelectric transistors and assemblies comprising ferroelectric transistors2025