{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Structure improving reliability of top electrode contact for resistance switching RAM having cells of varying height", "item": "https://www.patentleaderboard.com/patent/11594679"}]}

Home › Structure improving reliability of top electrode contact for resistance switching RAM having cells of varying height

Structure improving reliability of top electrode contact for resistance switching RAM having cells of varying height

US Patent 11594679 · Granted Feb 28, 2023

Estimated economic value: $10,425,000 ⓘ

Assignee

TSMC

Inventors

Cheng-Tai Hsiao (20 patents)
Sheng-Chau Chen (89 patents)
Hsun-Chung Kuang (91 patents)

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