Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Patterning magnetic tunnel junctions and the like while reducing detrimental resputtering of underlying features

Patterning magnetic tunnel junctions and the like while reducing detrimental resputtering of underlying features

US Patent 11476415 · Granted Oct 18, 2022

Estimated economic value: $6,904,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Stacked vertical transport field effect transistor with anchors2025
Double patterned microcooler having alternating fin widths2025
BEOL interconnect subtractive etch super via2025
Layered bottom electrode dielectric for embedded MRAM2025
Metal hard mask integration for active device structures2025
Patterning magnetic tunnel junctions and the like while reducing detrimental res2025
Patterning magnetic tunnel junctions and the like while reducing detrimental res2025
MRAM integration with self-aligned direct back side contact2025
Circuit interconnect structure2025
Stressed material within gate cut region2025
Air gap spacer for metal gates2025
Multilayer dielectric stack for damascene top-via integration2025