Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN films and its alloys with AIN at low temperatures

Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN films and its alloys with AIN at low temperatures

US Patent 11443942 · Granted Sep 13, 2022

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Expitaxial semiconductor/superconductor heterostructures2024
Multifunctional integrated acoustic devices and systems using epitaxial material2023
Suppression of Samson phase formation in Al—Mg alloys by boron addition2023
Aluminum nitride synthesis from nut shells2023
Gait assistance slab2022
System and method for projection of light pattern on work-piece2022
System and method for providing safety assistance in vehicle2022
UV laser slicing of β-Ga2O3 by micro-crack generation and propagation2021
Suppression of samson phase formation in Al—Mg alloys by boron addition2021
Epitaxial growth of cubic and hexagonal InN films and their alloys with AlN and 2021
Epitaxial growth of cubic and hexagonal InN films and their alloys with AlN and 2021
Epitaxial growth of cubic and hexagonal InN films and their alloys with AlN and 2021