Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Ion beam etching utilizing cryogenic wafer temperatures

Ion beam etching utilizing cryogenic wafer temperatures

US Patent 11289306 · Granted Mar 29, 2022

Estimated economic value: $185,675,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Ion beam etching with sidewall cleaning2025
Ion beam etching with sidewall cleaning2025
Etch selectivity control in atomic layer etching2025
Non-elastomeric, non-polymeric, non-metallic membrane valves for semiconductor p2025
Resistive random access memory with preformed filaments2024
Turbomolecular pump and cathode assembly for etching reactor2024
Film stack simplification for high aspect ratio patterning and vertical scaling2024
Ion beam etching with sidewall cleaning2024
Ion beam etching with sidewall cleaning2024
Conformal damage-free encapsulation of chalcogenide materials2023
Non-elastomeric, non-polymeric, non-metallic membrane valves for semiconductor p2023
Self-aligned vertical integration of three-terminal memory devices2023