Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Ultra-thin fin structure and method of fabricating the same

Ultra-thin fin structure and method of fabricating the same

US Patent 11189697 · Granted Nov 30, 2021

Estimated economic value: $16,535,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device having epitaxy source/drain regions2025
Increasing source/drain dopant concentration to reduced resistance2025
Ultra-thin fin structure and method of fabricating the same2025
Ultra-thin fin structure and method of fabricating the same2025
Ultra-thin fin structure and method of fabricating the same2025
Semiconductor device having merged epitaxial features with arc-like bottom surfa2025
Semiconductor device2024
Increasing source/drain dopant concentration to reduced resistance2024
Isolation structures for semiconductor devices2024
Isolation structures for semiconductor devices2024
Source/drain structure for semiconductor device2024
Semiconductor device having epitaxy source/drain regions2024