Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Increasing source/drain dopant concentration to reduced resistance

Increasing source/drain dopant concentration to reduced resistance

US Patent 12062710 · Granted Aug 13, 2024

Estimated economic value: $18,777,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device having epitaxy source/drain regions2025
Semiconductor device having epitaxy source/drain regions2025
Semiconductor device2025
Transistors with stacked semiconductor layers as channels2025
Increasing source/drain dopant concentration to reduced resistance2025
Increasing source/drain dopant concentration to reduced resistance2025
Epitaxial growth methods and structures thereof2025
Ultra-thin fin structure and method of fabricating the same2025
Semiconductor device having merged epitaxial features with arc-like bottom surfa2025
Semiconductor device having merged epitaxial features with arc-like bottom surfa2025
Semiconductor device and method2025
Dynamic laser-assisted etching2025