Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Increasing source/drain dopant concentration to reduced resistance

Increasing source/drain dopant concentration to reduced resistance

US Patent 12369342 · Granted Jul 22, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device having epitaxy source/drain regions2025
Semiconductor device having epitaxy source/drain regions2025
Semiconductor device2025
Transistors with stacked semiconductor layers as channels2025
Epitaxial growth methods and structures thereof2025
Ultra-thin fin structure and method of fabricating the same2025
Semiconductor device having merged epitaxial features with arc-like bottom surfa2025
Semiconductor device having merged epitaxial features with arc-like bottom surfa2025
Semiconductor device and method2025
Dynamic laser-assisted etching2025
Source/drain formation with reduced selective loss defects2024
Semiconductor device and methods of forming2024