Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device having epitaxy source/drain regions

Semiconductor device having epitaxy source/drain regions

US Patent 11916071 · Granted Feb 27, 2024

Estimated economic value: $10,178,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Confined source/drain epitaxy regions and method forming same2025
Semiconductor device having epitaxy source/drain regions2025
Semiconductor device having epitaxy source/drain regions2025
Semiconductor device having epitaxy source/drain regions2025
Semiconductor device having epitaxy source/drain regions2025
Method of forming devices with strained source/drain structures2025
Semiconductor device2025
Transistors with stacked semiconductor layers as channels2025
Increasing source/drain dopant concentration to reduced resistance2025
Increasing source/drain dopant concentration to reduced resistance2025
Epitaxial growth methods and structures thereof2025
Method of forming source/drain regions with quadrilateral layers2025