Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Nanosheet transistor having partially self-limiting bottom isolation extending into the substrate and under the source/drain and gate regions

Nanosheet transistor having partially self-limiting bottom isolation extending into the substrate and under the source/drain and gate regions

US Patent 11183558 · Granted Nov 23, 2021

Estimated economic value: $2,653,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Vertically stacked cascode bipolar junction transistor (BJT) pair sensor2025
Stacked complementary field effect transistors2025
Enhanced linerless vias2025
Power distribution network with backside power rail2025
Tunnel field effect transistor devices2025
Forksheet transistor with dual depth late cell boundary cut2025
Gate-all-around field-effect-transistor with wrap-around-channel inner spacer2025
Hybrid stacked field effect transistors2025
Gate induced drain leakage reduction in FinFETs2025
Semiconductor device having hybrid middle of line contacts2025
Textured cobalt aluminum/magnesium-aluminum-oxide pedestal for memory devices2025
Semiconductor device with void under source/drain region for backside contact2025