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Home › Field effect transistor constructions with gate insulator having local regions radially there-through that have different capacitance at different circumferential locations relative to a channel core periphery

Field effect transistor constructions with gate insulator having local regions radially there-through that have different capacitance at different circumferential locations relative to a channel core periphery

US Patent 11170835 · Granted Nov 9, 2021

Estimated economic value: $18,978,000 ⓘ

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