Issued Patents All Time
Showing 25 most recent of 320 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12166072 | Channel conduction in semiconductor devices | Kamal M. Karda, Haitao Liu, Si-Woo Lee, Fatma Arzum Simsek-Ege, Deepak Chandra Pandey +1 more | 2024-12-10 |
| 12112995 | Low capacitance through substrate via structures | Deepak Chandra Pandey, Haitao Liu | 2024-10-08 |
| 12029039 | Integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material | Guangyu Huang, Haitao Liu, Justin B. Dorhout, Sanh D. Tang, Akira Goda | 2024-07-02 |
| 12002836 | Pixel with strained silicon layer for improving carrier mobility and blue response in imagers | — | 2024-06-04 |
| 11916129 | Methods of forming diodes | Gurtej S. Sandhu | 2024-02-27 |
| 11824096 | Field-effect transistors and methods of their formation | Haitao Liu | 2023-11-21 |
| 11769542 | Gate-all-around floating-gate field effect memory transistor constructions including ferroelectric gate insulator | Kamal M. Karda, Durai Vishak Nirmal Ramaswamy, F. Daniel Gealy | 2023-09-26 |
| 11769795 | Channel conduction in semiconductor devices | Kamal M. Karda, Haitao Liu, Si-Woo Lee, Fatma Arzum Simsek-Ege, Deepak Chandra Pandey +1 more | 2023-09-26 |
| 11658242 | Integrated assemblies containing diffusion alleviating two-dimensional materials | Kamal M. Karda, Haitao Liu | 2023-05-23 |
| 11569266 | Integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material | Guangyu Huang, Haitao Liu, Justin B. Dorhout, Sanh D. Tang, Akira Goda | 2023-01-31 |
| 11362018 | Low capacitance through substrate via structures | Deepak Chandra Pandey, Haitao Liu | 2022-06-14 |
| 11309321 | Integrated structures containing vertically-stacked memory cells | Haitao Liu, Sergei Koveshnikov, Dimitrios Pavlopoulos, Guangyu Huang | 2022-04-19 |
| 11302703 | Apparatuses having memory cells with two transistors and one capacitor, and having body regions of the transistors coupled with reference voltages | Kamal M. Karda, Srinivas Pulugurtha, Rajesh N. Gupta | 2022-04-12 |
| 11211487 | Transistors, memory structures and memory arrays containing two-dimensional materials between a source/drain region and a channel region | Kamal M. Karda, Haitao Liu | 2021-12-28 |
| 11170835 | Field effect transistor constructions with gate insulator having local regions radially there-through that have different capacitance at different circumferential locations relative to a channel core periphery | Kamal M. Karda, Durai Vishak Nirmal Ramaswamy, F. Daniel Gealy | 2021-11-09 |
| 11171206 | Channel conduction in semiconductor devices | Kamal M. Karda, Haitao Liu, Si-Woo Lee, Fatma Arzum Simsek-Ege, Deepak Chandra Pandey +1 more | 2021-11-09 |
| 11121223 | Control gate structures for field-effect transistors | Haitao Liu | 2021-09-14 |
| 11107832 | Apparatuses including memory cells and related methods | Guangyu Huang, Haitao Liu, Srinivas Pulugurtha | 2021-08-31 |
| 11024643 | Methods of forming integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material | Guangyu Huang, Haitao Liu, Justin B. Dorhout, Sanh D. Tang, Akira Goda | 2021-06-01 |
| 11018255 | Devices and systems with string drivers including high band gap material and methods of formation | Haitao Liu, Guangyu Huang, Akira Goda, Deepak Chandra Pandey, Kamal M. Karda | 2021-05-25 |
| 10910431 | Pixel with strained silicon layer for improving carrier mobility and blue response in imagers | — | 2021-02-02 |
| 10892268 | Integrated structures containing vertically-stacked memory cells | Haitao Liu, Sergei Koveshnikov, Dimitrios Pavlopoulos, Guangyu Huang | 2021-01-12 |
| 10622056 | Apparatuses having compensator lines along wordlines and independently controlled relative to the wordlines | Deepak Chandra Pandey, Haitao Liu | 2020-04-14 |
| 10622361 | Apparatuses having body connection lines coupled with access devices | Deepak Chandra Pandey, Haitao Liu, Sanh D. Tang | 2020-04-14 |
| 10607988 | Apparatuses having memory cells with two transistors and one capacitor, and having body regions of the transistors coupled with reference voltages | Kamal M. Karda, Srinivas Pulugurtha, Rajesh N. Gupta | 2020-03-31 |