| 12166072 |
Channel conduction in semiconductor devices |
Kamal M. Karda, Haitao Liu, Si-Woo Lee, Fatma Arzum Simsek-Ege, Deepak Chandra Pandey +1 more |
2024-12-10 |
|
| 12112995 |
Low capacitance through substrate via structures |
Deepak Chandra Pandey, Haitao Liu |
2024-10-08 |
$26,633,000 |
| 12029039 |
Integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material |
Guangyu Huang, Haitao Liu, Justin B. Dorhout, Sanh D. Tang, Akira Goda |
2024-07-02 |
|
| 12002836 |
Pixel with strained silicon layer for improving carrier mobility and blue response in imagers |
— |
2024-06-04 |
$27,497,000 |
| 11916129 |
Methods of forming diodes |
Gurtej S. Sandhu |
2024-02-27 |
$14,682,000 |
| 11824096 |
Field-effect transistors and methods of their formation |
Haitao Liu |
2023-11-21 |
$23,209,000 |
| 11769542 |
Gate-all-around floating-gate field effect memory transistor constructions including ferroelectric gate insulator |
Kamal M. Karda, Durai Vishak Nirmal Ramaswamy, F. Daniel Gealy |
2023-09-26 |
$14,458,000 |
| 11769795 |
Channel conduction in semiconductor devices |
Kamal M. Karda, Haitao Liu, Si-Woo Lee, Fatma Arzum Simsek-Ege, Deepak Chandra Pandey +1 more |
2023-09-26 |
$14,458,000 |
| 11658242 |
Integrated assemblies containing diffusion alleviating two-dimensional materials |
Kamal M. Karda, Haitao Liu |
2023-05-23 |
$14,313,000 |
| 11569266 |
Integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material |
Guangyu Huang, Haitao Liu, Justin B. Dorhout, Sanh D. Tang, Akira Goda |
2023-01-31 |
$12,340,000 |
| 11362018 |
Low capacitance through substrate via structures |
Deepak Chandra Pandey, Haitao Liu |
2022-06-14 |
$13,168,000 |
| 11309321 |
Integrated structures containing vertically-stacked memory cells |
Haitao Liu, Sergei Koveshnikov, Dimitrios Pavlopoulos, Guangyu Huang |
2022-04-19 |
$19,230,000 |
| 11302703 |
Apparatuses having memory cells with two transistors and one capacitor, and having body regions of the transistors coupled with reference voltages |
Kamal M. Karda, Srinivas Pulugurtha, Rajesh N. Gupta |
2022-04-12 |
$14,807,000 |
| 11211487 |
Transistors, memory structures and memory arrays containing two-dimensional materials between a source/drain region and a channel region |
Kamal M. Karda, Haitao Liu |
2021-12-28 |
$20,140,000 |
| 11170835 |
Field effect transistor constructions with gate insulator having local regions radially there-through that have different capacitance at different circumferential locations relative to a channel core periphery |
Kamal M. Karda, Durai Vishak Nirmal Ramaswamy, F. Daniel Gealy |
2021-11-09 |
$18,978,000 |
| 11171206 |
Channel conduction in semiconductor devices |
Kamal M. Karda, Haitao Liu, Si-Woo Lee, Fatma Arzum Simsek-Ege, Deepak Chandra Pandey +1 more |
2021-11-09 |
$18,978,000 |
| 11121223 |
Control gate structures for field-effect transistors |
Haitao Liu |
2021-09-14 |
$15,044,000 |
| 11107832 |
Apparatuses including memory cells and related methods |
Guangyu Huang, Haitao Liu, Srinivas Pulugurtha |
2021-08-31 |
$19,408,000 |
| 11024643 |
Methods of forming integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material |
Guangyu Huang, Haitao Liu, Justin B. Dorhout, Sanh D. Tang, Akira Goda |
2021-06-01 |
$25,615,000 |
| 11018255 |
Devices and systems with string drivers including high band gap material and methods of formation |
Haitao Liu, Guangyu Huang, Akira Goda, Deepak Chandra Pandey, Kamal M. Karda |
2021-05-25 |
$23,972,000 |
| 10910431 |
Pixel with strained silicon layer for improving carrier mobility and blue response in imagers |
— |
2021-02-02 |
$21,204,000 |
| 10892268 |
Integrated structures containing vertically-stacked memory cells |
Haitao Liu, Sergei Koveshnikov, Dimitrios Pavlopoulos, Guangyu Huang |
2021-01-12 |
$27,723,000 |
| 10622056 |
Apparatuses having compensator lines along wordlines and independently controlled relative to the wordlines |
Deepak Chandra Pandey, Haitao Liu |
2020-04-14 |
$17,667,000 |
| 10622361 |
Apparatuses having body connection lines coupled with access devices |
Deepak Chandra Pandey, Haitao Liu, Sanh D. Tang |
2020-04-14 |
$17,667,000 |
| 10607988 |
Apparatuses having memory cells with two transistors and one capacitor, and having body regions of the transistors coupled with reference voltages |
Kamal M. Karda, Srinivas Pulugurtha, Rajesh N. Gupta |
2020-03-31 |
$9,822,000 |
