Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material

Integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material

US Patent 11569266 · Granted Jan 31, 2023

Estimated economic value: $12,340,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Self-optimizing corrective read offsets with lateral charge migration proxies2025
Program refresh with gate-induced drain leakage2025
Buffer allocation for reducing block transit penalty2025
Multiple-pass programming of memory cells using temporary parity generation2025
Temporary parity buffer allocation for zones in a parity group2025
Padding cached data with valid data for memory flush commands2025
Memory device having tiers of 2-transistor memory cells2025
Integrated assemblies which include stacked memory decks, and methods of forming2025
Selectively programming retired wordlines of a memory device2025
Charge storage apparatus and methods2025
Modified read counter incrementing scheme in a memory sub-system2025
Stack of horizontally extending and vertically overlapping features, methods of 2025