Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Precursors for the atomic layer deposition of transition metals and methods of use

Precursors for the atomic layer deposition of transition metals and methods of use

US Patent 11078224 · Granted Aug 3, 2021

Estimated economic value: $89,613,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Dry etching with etch byproduct self-cleaning2025
Enhanced etch selectivity using halides2025
Selective etch of a substrate2025
Gap-fill with aluminum-containing films2024
Low temperature deposition of iridium containing films2024
Electronic device having an oxygen free platinum group metal film2024
Methods and precursors for selective deposition of metal films2024
Determination of recipes for manufacturing semiconductor devices2023
Ruthenium film deposition using low valent metal precursors2023
Methods for depositing sacrificial coatings on aerospace components2023
Low temperature deposition of iridium containing films2023
Doped and undoped vanadium oxides for low-k spacer applications2023