Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Nanosheet transistor with fully isolated source and drain regions and spacer pinch off

Nanosheet transistor with fully isolated source and drain regions and spacer pinch off

US Patent 10916627 · Granted Feb 9, 2021

Estimated economic value: $3,536,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Liner-less via contact2025
Semiconductor device having hybrid middle of line contacts2025
Wraparound contact with reduced distance to channel2025
SRAM with staggered stacked FET2025
Co-integrating gate-all-around nanosheet transistors and comb-nanosheet transist2025
Method of making a semiconductor device using a dummy gate2025
Stacked FETS including devices with thick gate oxide2025
Gate-cut and separation techniques for enabling independent gate control of stac2025
Gate-all-around nanosheet field effect transistor integrated with fin field effe2025
Dielectric reflow for boundary control2025
Multi-fin FINFET device including epitaxial growth barrier on outside surfaces o2025
Source or drain template for reducing strain loss in spaced-apart nanosheet chan2025