Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM

Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM

US Patent 10868235 · Granted Dec 15, 2020

Estimated economic value: $3,031,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)2025
Electronic package and manufacturing method thereof2025
M-type hexaferrite having a planar anisotropy2025
Method for forming a perpendicular spin torque oscillator (PSTO) including formi2025
Magnetic random access memory and manufacturing method thereof2025
Sub 60nm etchless MRAM devices by ion beam etching fabricated T-shaped bottom el2025
Semiconductor memory structure and method for forming the semiconductor memory s2025
Multilayer structure for reducing film roughness in magnetic devices2025
Multilayer structure for reducing film roughness in magnetic devices2025
Multilayer structure for reducing film roughness in magnetic devices2025
Backlight unit and color filter on array configuration for a liquid crystal disp2025
Optical system including pancake lens assembly2025