Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Structure and method to form phase change memory cell with self- align top electrode contact

Structure and method to form phase change memory cell with self- align top electrode contact

US Patent 10833267 · Granted Nov 10, 2020

Estimated economic value: $848,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Integratead wet clean for bevel treatments2025
FinFET gate cut after dummy gate removal2025
Antenna assisted ReRAM formation2025
Gate-cut and separation techniques for enabling independent gate control of stac2025
Phase change memory programming current leakage reduction2025
Proximity heater to lower RRAM forming voltage2025
Uniform voltage drop in arrays of memory devices2025
Phase change memory gaps2025
Phase change memory using multiple phase change layers and multiple heat conduct2025
Phase change memory using multiple phase change layers and multiple heat conduct2025
Stacked FETS with non-shared work function metals2025
Backside power rails and power distribution network for density scaling2025