Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Controlling active fin height of FinFET device using etch protection layer to prevent recess of isolation layer during gate oxide removal

Controlling active fin height of FinFET device using etch protection layer to prevent recess of isolation layer during gate oxide removal

US Patent 10770361 · Granted Sep 8, 2020

Estimated economic value: $3,136,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Optimized designing method for laminate preform of ceramic matrix composite2025
Asymmetric gate extension in stacked FET2025
Vertically stacked fin semiconductor devices2025
Fabrication of embedded memory devices utilizing a self assembled monolayer2025
Nanosheet device with air-gaped source/drain regions2025
Late gate extension2025
CMOS top source/drain region doping and epitaxial growth for a vertical field ef2025
Dielectric reflow for boundary control2025
Self-aligned C-shaped vertical field effect transistor2025
Additive interconnect formation2024
Stacked field-effect transistors2024
Airgap isolation for back-end-of-the-line semiconductor interconnect structure w2024