Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming a buried interconnect and the resulting devices

Method of forming a buried interconnect and the resulting devices

US Patent 10720391 · Granted Jul 21, 2020

Estimated economic value: $116,970,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Inverted top-tier FET for multi-tier gate-on-gate 3-dimension integration (3Di)2025
TSV and backside power distribution structure2025
Capacitor integrated with memory element of memory cell2025
Wraparound contact with reduced distance to channel2025
Nanowire source/drain formation for nanosheet device2025
Local enlarged via-to-backside power rail2025
Skip-level TSV with hybrid dielectric scheme for backside power delivery2025
Dual structured buried rail2025
Method and structure of forming independent contact for staggered CFET2025
Strain generation and anchoring in gate-all-around field effect transistors2025
Buried power rail with robust connection to a wrap around contact2025
Formation of trench silicide source or drain contacts without gate damage2025