Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Overturned thin film device with self-aligned gate and source/drain (S/D) contacts

Overturned thin film device with self-aligned gate and source/drain (S/D) contacts

US Patent 10700214 · Granted Jun 30, 2020

Estimated economic value: $3,003,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

CFET with independent gate control and low parasitic capacitance2025
Reduced capacitance between power via bar and gates2025
Backside self aligned skip via2025
Airgap spacer for power via2025
Semiconductor passive device integration for silicon-on-insulator substrate2025
Different dimensions across active region for stronger via to backside power rai2025
Early backside first power delivery network2025
Source/drain contact at tight cell boundary2025
BEOL interconnect subtractive etch super via2025
Interconnect structures with vias having vertical and horizontal sections2025
Wrap around metal via structure2025
Static random access memory device with stacked FETs2025