{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "PSTTM device with free magnetic layers coupled through a metal layer having high temperature stability", "item": "https://www.patentleaderboard.com/patent/10580970"}]}
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Home › PSTTM device with free magnetic layers coupled through a metal layer having high temperature stability

PSTTM device with free magnetic layers coupled through a metal layer having high temperature stability

US Patent 10580970 · Granted Mar 3, 2020

Estimated economic value: $18,388,000 ⓘ

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