Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Cobalt silicidation process for substrates comprised with a silicon-germanium layer

Cobalt silicidation process for substrates comprised with a silicon-germanium layer

US Patent 10446646 · Granted Oct 15, 2019

Estimated economic value: $13,315,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device and method of manufacture2025
Apparatus and method for use with a substrate chamber2025
Annealing apparatus and method of operating the same2025
Apparatus and method for use with a substrate chamber2025
Semiconductor device and methods of forming the same2025
Method of manufacturing a source/drain of a semiconductor device using multiple 2025
Semiconductor device and manufacturing method thereof2025
Semiconductor device having multi-layer epitaxial structures with different latt2025
Systems, methods, and semiconductor devices2025
Shallow trench isolation forming method and structures resulting therefrom2025
Source and drain engineering process for multigate devices2025
Multi-gate device and method of fabrication thereof2025