Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Word line dependent pass voltages in non-volatile memory

Word line dependent pass voltages in non-volatile memory

US Patent 10283208 · Granted May 7, 2019

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Non-volatile storage system with adjustable select gates as a function of temper2020
Word line dependent pass voltages in non-volatile memory2019
Three-dimensional memory structure having a back gate electrode2019
Three-dimensional memory devices containing inter-tier dummy memory cells and me2018
Word line dependent pass voltages in non-volatile memory2018
Stacked vertical memory array architectures, systems and methods2017
Vertical NAND and method of making thereof using sequential stack etching and la2016
Recovery of partially programmed block in non-volatile memory2016
Group word line erase and erase-verify methods for 3D non-volatile memory2016
Compact three dimensional vertical NAND and method of making thereof2016
Pseudo block operation mode in 3D NAND2016
Selection of data for redundancy calculation by likely error rate2015