Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Transistor structures having a deep recessed P+ junction and methods for making same

Transistor structures having a deep recessed P+ junction and methods for making same

US Patent 10115815 · Granted Oct 30, 2018

Estimated economic value: $11,276,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Power semiconductor device with reduced strain2024
Power semiconductor device with reduced strain2024
Power semiconductor devices having gate trenches and buried edge terminations an2023
Superjunction power semiconductor devices formed via ion implantation channeling2023
Semiconductor structure and fabrication method thereof2022
Passivation structure for semiconductor devices2022
Semiconductor power devices having gate dielectric layers with improved breakdow2022
Power switching devices with high dV/dt capability and methods of making such de2021
Power switching devices with high dV/dt capability and methods of making such de2021
Power silicon carbide based MOSFET transistors with improved short circuit capab2021
Super junction power semiconductor devices formed via ion implantation channelin2021
Power module for supporting high current densities2021