Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Word line contact regions for three-dimensional non-volatile memory

Word line contact regions for three-dimensional non-volatile memory

US Patent 10115440 · Granted Oct 30, 2018

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Three-dimensional memory device with finned support pillar structures and method2025
Apparatus and methods for back-to-back state machine controller bus operations2025
Bit line modulation to compensate for cell source variation2025
Microelectronic devices including staircase structures, and related memory devic2024
Dynamic sense amplifier supply voltage for power and die size reduction2024
Window program verify to reduce data latch usage in memory device2024
Non-volatile memory with isolation latch shared between data latch groups2024
Sense amplifier structure for non-volatile memory with neighbor bit line local d2024
Systems and methods for staggering read operation of sub-blocks2024
Memory cell sensing by charge sharing between sensing nodes2024
Transfer latch tiers2023
Memory cell programming including applying programming pulses of different pulse2023