Issued Patents All Time
Showing 25 most recent of 70 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9502220 | Plasma processing apparatus and plasma processing method | Shogo Okita, Tomohiro Okumura | 2016-11-22 |
| 8709926 | Plasma doping method and plasma doping apparatus | Tomohiro Okumura, Ichiro Nakayama, Yuichiro Sasaki | 2014-04-29 |
| 8652953 | Plasma doping method with gate shutter | Tomohiro Okumura, Yuichiro Sasaki, Katsumi Okashita, Hiroyuki Ito, Ichiro Nakayama +1 more | 2014-02-18 |
| 8536000 | Method for producing a semiconductor device have fin-shaped semiconductor regions | Yuichiro Sasaki, Keiichi Nakamoto, Katsumi Okashita, Hisataka Kanada | 2013-09-17 |
| 8409939 | Semiconductor device and method for fabricating the same | Yuichiro Sasaki, Katsumi Okashita | 2013-04-02 |
| 8404573 | Plasma processing method and apparatus | Tomohiro Okumura, Yuichiro Sasaki, Satoshi Maeshima, Ichiro Nakayama | 2013-03-26 |
| 8288259 | Plasma processing method and apparatus | Tomohiro Okumura, Ichiro Nakayama, Satoshi Maeshima, Yuichiro Sasaki | 2012-10-16 |
| 8258585 | Semiconductor device | Yuichiro Sasaki, Katsumi Okashita, Keiichi Nakamoto | 2012-09-04 |
| 8257501 | Plasma doping device with gate shutter | Tomohiro Okumura, Yuichiro Sasaki, Katsumi Okashita, Hiroyuki Ito, Ichiro Nakayama +1 more | 2012-09-04 |
| 8222128 | Method for introducing impurities and apparatus for introducing impurities | Yuichiro Sasaki, Cheng Jin | 2012-07-17 |
| 8193080 | Method for fabricating semiconductor device and plasma doping system | Yuichiro Sasaki, Katsumi Okashita | 2012-06-05 |
| 8138582 | Impurity introducing apparatus having feedback mechanism using optical characteristics of impurity introducing region | Cheng Jin, Yuichiro Sasaki | 2012-03-20 |
| 8129202 | Plasma doping method and apparatus | Tomohiro Okumura, Yuichiro Sasaki, Katsumi Okashita, Hiroyuki Ito, Cheng Jin +1 more | 2012-03-06 |
| 8124507 | Semiconductor device and method for fabricating the same | Yuichiro Sasaki, Katsumi Okashita | 2012-02-28 |
| 8105926 | Method for producing a semiconductor device by plasma doping a semiconductor region to form an impurity region | Yuichiro Sasaki, Katsumi Okashita, Keiichi Nakamoto, Hiroyuki Ito | 2012-01-31 |
| 8063437 | Semiconductor device and method for producing the same | Yuichiro Sasaki, Katsumi Okashita, Keiichi Nakamoto, Hisataka Kanada | 2011-11-22 |
| 8030187 | Method for manufacturing semiconductor device | Yuichiro Sasaki, Katsumi Okashita, Keiichi Nakamoto | 2011-10-04 |
| 8012862 | Method for manufacturing semiconductor device using plasma doping | Katsumi Okashita, Yuichiro Sasaki, Keiichi Nakamoto | 2011-09-06 |
| 8004045 | Semiconductor device and method for producing the same | Yuichiro Sasaki, Keiichi Nakamoto, Katsumi Okashita, Hisataka Kanada | 2011-08-23 |
| 7981779 | Method for making junction and processed material formed using the same | Yuichiro Sasaki, Cheng Jin | 2011-07-19 |
| 7972945 | Plasma doping apparatus and method, and method for manufacturing semiconductor device | Yuichiro Sasaki, Katsumi Okashita | 2011-07-05 |
| 7939388 | Plasma doping method and plasma doping apparatus | Tomohiro Okumura, Hisao Nagai, Yuichiro Sasaki, Katsumi Okashita, Hiroyuki Ito | 2011-05-10 |
| 7932185 | Process for fabricating semiconductor device | Toshio Kudo, Yuichiro Sasaki, Cheng Jin | 2011-04-26 |
| 7888937 | Beam current sensor | Tamaki Watanabe, Takeshi Katayama, Masayuki Kase, Tokihiro Ikeda, Shin Watanabe +3 more | 2011-02-15 |
| 7871853 | Plasma doping method and apparatus employed in the same | Yuichiro Sasaki, Katsumi Okashita, Hiroyuki Ito | 2011-01-18 |