Issued Patents All Time
Showing 26–50 of 55 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7459762 | Programmable resistance memory element with threshold switching material | Sergey Kostylev | 2008-12-02 |
| 7407829 | Electrically programmable memory element with improved contacts | Tyler Lowrey, Stanford R. Ovshinsky, Guy Wicker, Patrick Klersy, Boil Pashmakov +1 more | 2008-08-05 |
| 7327602 | Methods of accelerated life testing of programmable resistance memory elements | Sergey Kostylev, Tyler Lowrey | 2008-02-05 |
| 7282730 | Forming a carbon layer between phase change layers of a phase change memory | Sergey Kostylev, Tyler Lowrey, Guy Wicker | 2007-10-16 |
| 7280390 | Reading phase change memories without triggering reset cell threshold devices | Sergey Kostylev, Tyler Lowrey, Ward Parkinson | 2007-10-09 |
| 6992369 | Programmable resistance memory element with threshold switching material | Sergey Kostylev | 2006-01-31 |
| 6969866 | Electrically programmable memory element with improved contacts | Tyler Lowrey, Stanford R. Ovshinsky, Guy Wicker, Patrick Klersy, Boil Pashmakov +1 more | 2005-11-29 |
| 6914801 | Method of eliminating drift in phase-change memory | Sergey Kostylev, Tyler Lowrey | 2005-07-05 |
| 6872963 | Programmable resistance memory element with layered memory material | Sergey Kostylev, Patrick Klersy | 2005-03-29 |
| 6567296 | Memory device | Giulio Casagrande, Tyler Lowrey, Roberto Bez, Guy Wicker, Edward J. Spall +1 more | 2003-05-20 |
| 6087674 | Memory element with memory material comprising phase-change material and dielectric material | Standford R. Ovshinsky, David Strand, Patrick Klersy, Sergey Kostylev, Boil Pashmakov | 2000-07-11 |
| 6075719 | Method of programming phase-change memory element | Tyler Lowrey, Guy Wicker, Boil Pashmakov, Patrick Klersy, Sergey Kostylev | 2000-06-13 |
| 5933365 | Memory element with energy control mechanism | Patrick Klersy, Boil Pashmakov, Sergey Kostylev, Stanford R. Ovshinsky | 1999-08-03 |
| 5825046 | Composite memory material comprising a mixture of phase-change memory material and dielectric material | Stanford R. Ovshinsky, David Strand, Patrick Klersy, Sergey Kostylev, Boil Pashmakov | 1998-10-20 |
| 5757446 | Liquid crystal display matrix array employing ovonic threshold switching devices to isolate individual pixels | Stanford R. Ovshinsky, Rosa Young, Guy Wicker | 1998-05-26 |
| 5694146 | Active matrix LCD array employing thin film chalcogenide threshold switches to isolate individual pixels | Stanford R. Ovshinsky, Rosa Young, Guy Wicker | 1997-12-02 |
| 5596522 | Homogeneous compositions of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements | Stanford R. Ovshinsky, Stephen J. Hudgens, David Strand, Jesus Gonzalez-Hernandez, Hellmut Fritzsche +3 more | 1997-01-21 |
| 5534711 | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom | Stanford R. Ovshinsky, David Strand, Patrick Klersy | 1996-07-09 |
| 5414271 | Electrically erasable memory elements having improved set resistance stability | Stanford R. Ovshinsky, Stephen J. Hudgens, David Strand, Guy Wicker | 1995-05-09 |
| 5406509 | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom | Stanford R. Ovshinsky, Qiuyi Ye, David Strand | 1995-04-11 |
| 5341328 | Electrically erasable memory elements having reduced switching current requirements and increased write/erase cycle life | Stanford R. Ovshinsky, Stephen J. Hudgens, David Strand, Guy Wicker | 1994-08-23 |
| 5335219 | Homogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements | Stanford R. Ovshinsky, Stephen J. Hudgens, David Strand, Jesus Gonzalez-Hernandez, Hellmut Fritzsche +3 more | 1994-08-02 |
| 5296716 | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom | Stanford R. Ovshinsky, Quiyi Ye, David Strand, Stephen J. Hudgens | 1994-03-22 |
| 5180690 | Method of forming a layer of doped crystalline semiconductor alloy material | Stanford R. Ovshinsky, Guy Wicker, David Beglau, Ronald Himmler, David Jablonski +1 more | 1993-01-19 |
| 5166758 | Electrically erasable phase change memory | Stanford R. Ovshinsky, Stephen J. Hudgens, David Strand, Guy Wicker | 1992-11-24 |