| 10153274 |
Semiconductor device |
— |
2018-12-11 |
| 9660061 |
Semiconductor device |
— |
2017-05-23 |
| 8598044 |
Method of fabricating a semiconductor device |
Tatsuya Usami, Masayuki Hiroi, Akira Matsumoto |
2013-12-03 |
| 7833901 |
Method for manufacturing a semiconductor device having a multi-layered insulating structure of SiOCH layers and an SiO2 layer |
Koichi Ohto, Tatsuya Usami, Noboru Morita, Koji Arita, Ryohei Kitao +1 more |
2010-11-16 |
| 7582970 |
Carbon containing silicon oxide film having high ashing tolerance and adhesion |
Kouichi Owto, Tatsuya Usami, Noboru Morita, Kouji Arita, Ryouhei Kitao +1 more |
2009-09-01 |
| 7563705 |
Manufacturing method of semiconductor device |
Takashi TONEGAWA, Koji Arita, Tatsuya Usami, Noboru Morita, Koichi Ohto +2 more |
2009-07-21 |
| 7420279 |
Carbon containing silicon oxide film having high ashing tolerance and adhesion |
Kouichi Ohto, Tatsuya Usami, Noboru Morita, Kouji Arita, Ryouhei Kitao +1 more |
2008-09-02 |
| 7132732 |
Semiconductor device having two distinct sioch layers |
Koichi Ohto, Tatsuya Usami, Noboru Morita, Koji Arita, Ryohei Kitao +1 more |
2006-11-07 |
| 7102236 |
Carbon containing silicon oxide film having high ashing tolerance and adhesion |
Kouichi Ohto, Tatsuya Usami, Noboru Morita, Kouji Arita, Ryouhei Kitao +1 more |
2006-09-05 |
| 7074698 |
Method of fabricating semiconductor device using plasma-enhanced CVD |
Noboru Morita, Tatsuya Usami, Koichi Ohto, Koji Arita, Ryohei Kitao +1 more |
2006-07-11 |
| 5691220 |
Process of fabricating semiconductor device having capacitor electrode implanted with boron difluoride |
Koichi Ando |
1997-11-25 |
| 5397748 |
Method of producing semiconductor device with insulating film having at least silicon nitride film |
Hirohito Watanabe |
1995-03-14 |