Issued Patents All Time
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10153274 | Semiconductor device | — | 2018-12-11 |
| 9660061 | Semiconductor device | — | 2017-05-23 |
| 8598044 | Method of fabricating a semiconductor device | Tatsuya Usami, Masayuki Hiroi, Akira Matsumoto | 2013-12-03 |
| 7833901 | Method for manufacturing a semiconductor device having a multi-layered insulating structure of SiOCH layers and an SiO2 layer | Koichi Ohto, Tatsuya Usami, Noboru Morita, Koji Arita, Ryohei Kitao +1 more | 2010-11-16 |
| 7582970 | Carbon containing silicon oxide film having high ashing tolerance and adhesion | Kouichi Owto, Tatsuya Usami, Noboru Morita, Kouji Arita, Ryouhei Kitao +1 more | 2009-09-01 |
| 7563705 | Manufacturing method of semiconductor device | Takashi TONEGAWA, Koji Arita, Tatsuya Usami, Noboru Morita, Koichi Ohto +2 more | 2009-07-21 |
| 7420279 | Carbon containing silicon oxide film having high ashing tolerance and adhesion | Kouichi Ohto, Tatsuya Usami, Noboru Morita, Kouji Arita, Ryouhei Kitao +1 more | 2008-09-02 |
| 7132732 | Semiconductor device having two distinct sioch layers | Koichi Ohto, Tatsuya Usami, Noboru Morita, Koji Arita, Ryohei Kitao +1 more | 2006-11-07 |
| 7102236 | Carbon containing silicon oxide film having high ashing tolerance and adhesion | Kouichi Ohto, Tatsuya Usami, Noboru Morita, Kouji Arita, Ryouhei Kitao +1 more | 2006-09-05 |
| 7074698 | Method of fabricating semiconductor device using plasma-enhanced CVD | Noboru Morita, Tatsuya Usami, Koichi Ohto, Koji Arita, Ryohei Kitao +1 more | 2006-07-11 |
| 5691220 | Process of fabricating semiconductor device having capacitor electrode implanted with boron difluoride | Koichi Ando | 1997-11-25 |
| 5397748 | Method of producing semiconductor device with insulating film having at least silicon nitride film | Hirohito Watanabe | 1995-03-14 |