PH

Peter J. Hopper

NS National Semiconductor: 213 patents #1 of 2,238Top 1%
TI Texas Instruments: 16 patents #831 of 12,488Top 7%
Eastman Kodak: 6 patents #1,782 of 8,114Top 25%
FO Foveon: 2 patents #17 of 65Top 30%
📍 San Jose, CA: #41 of 32,062 inventorsTop 1%
🗺 California: #389 of 386,348 inventorsTop 1%
Overall (All Time): #2,262 of 4,157,543Top 1%
238
Patents All Time

Issued Patents All Time

Showing 226–238 of 238 patents

Patent #TitleCo-InventorsDate
6528844 Split-gate flash memory cell with a tip in the middle of the floating gate Yuri Mirgorodski 2003-03-04
6515331 MOSFET structure for use in ESD protection devices Manuel Carneiro 2003-02-04
6498373 ESD protection CMOS structure with dynamic substrate control Vladislav Vashchenko 2002-12-24
6492859 Adjustable electrostatic discharge protection clamp Vladislav Vashchenko 2002-12-10
6433368 LVTSCR with a holding voltage that is greater than a DC bias voltage on a to-be-protected node Vladislav Vashchenko 2002-08-13
6414367 Interconnect exhibiting reduced parasitic capacitance variation 2002-07-02
6407445 MOSFET-based electrostatic discharge (ESD) protection structure with a floating heat sink Vladislav Vashchenko 2002-06-18
6362080 Formation of a vertical junction through process simulation based optimization of implant doses and energies 2002-03-26
6355959 Gate electrode controllable electrostatic discharge (ESD) protection structure having a MOSFET with source and drain regions in separate wells Vladislav Vashchenko, Manuel Carneiro 2002-03-12
6285057 Semiconductor device combining a MOSFET structure and a vertical-channel trench-substrate field effect device Christoph Pichler 2001-09-04
6121096 Implant process utilizing as an implant mask, spacers projecting vertically beyond a patterned polysilicon gate layer 2000-09-19
6103605 Process for defining the width of silicon gates using spacers as an etch hard mask 2000-08-15
5981346 Process for forming physical gate length dependent implanted regions using dual polysilicon spacers 1999-11-09