Issued Patents All Time
Showing 51–69 of 69 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6838866 | Process for measuring depth of source and drain | Hui-Min Mao | 2005-01-04 |
| 6831016 | Method to prevent electrical shorts between adjacent metal lines | Ping Hsu | 2004-12-14 |
| 6815356 | Method for forming bottle trench | Hsin-Jung Ho, Yi-Nan Chen | 2004-11-09 |
| 6815307 | Method for fabricating a deep trench capacitor | Ping Hsu | 2004-11-09 |
| 6800535 | Method for forming bottle-shaped trenches | Yi-Nan Chen, Hsin-Jung Ho | 2004-10-05 |
| 6790740 | Process for filling polysilicon seam | Tse-Yao Huang, Yi-Nan Chen | 2004-09-14 |
| 6767800 | Process for integrating alignment mark and trench device | Liang-Hsin Chen | 2004-07-27 |
| 6750147 | Process for integration of a trench for capacitors and removal of black silicon | Frasier Wang | 2004-06-15 |
| 6709975 | Method of forming inter-metal dielectric | Hui-Min Mao, Yi-Nan Chen | 2004-03-23 |
| 6706587 | Method for forming buried plates | Hui-Min Mao, Ying Huan Chuang | 2004-03-16 |
| 6703311 | Method for estimating capacitance of deep trench capacitors | Hui-Min Mao, Ying Huan Chuang, Yu-Pi Lee | 2004-03-09 |
| 6696344 | Method for forming a bottle-shaped trench | Shian-Jyh Lin, Hsin-Jung Ho, Chao-Sung Lai | 2004-02-24 |
| 6610567 | DRAM having a guard ring and process of fabricating the same | I-Sheng Liu | 2003-08-26 |
| 6541347 | Method of providing planarity of a photoresist | Han-Chih Lin, Hui-Min Mao | 2003-04-01 |
| 6407421 | DRAM having a guard ring and process of fabricating the same | Sheng-Ming Liu | 2002-06-18 |
| 6383936 | Method for removing black silicon in semiconductor fabrication | Hung-Hsin Lin | 2002-05-07 |
| 6303491 | Method for fabricating self-aligned contact hole | Lin-Chin Su, Jengping Lin, Tse-Yao Huang | 2001-10-16 |
| 6225186 | Method for fabricating LOCOS isolation | Lin-Chin Su, Minn-Jiunn Jiang | 2001-05-01 |
| 6153482 | Method for fabricating LOCOS isolation having a planar surface which includes having the polish stop layer at a lower level than the LOCOS formation | Lin-Chin Su, Miin-Jiunn Jiang, Hung-Chang Liao, Jim Wang, Chung-Min Lin | 2000-11-28 |