Issued Patents All Time
Showing 1–17 of 17 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11508806 | Low leakage ESD MOSFET | Joel M. McGregor | 2022-11-22 |
| 11282959 | FET device insensitive to noise from drive path | James Nguyen | 2022-03-22 |
| 10930644 | Bi-directional snapback ESD protection circuit | — | 2021-02-23 |
| 10665712 | LDMOS device with a field plate contact metal layer with a sub-maximum size | Joel M. McGregor, Jeesung Jung | 2020-05-26 |
| 10263420 | Bi-directional snapback ESD protection circuit | — | 2019-04-16 |
| 10083930 | Semiconductor device reducing parasitic loop inductance of system | Huaifeng Wang, Hunt Hang Jiang, Francis Yu | 2018-09-25 |
| 10069422 | Synchronous switching converter and associated integrated semiconductor device | Huaifeng Wang | 2018-09-04 |
| 9941171 | Method for fabricating LDMOS with reduced source region | Ji-Hyoung Yoo, Joel M. McGregor | 2018-04-10 |
| 9893146 | Lateral DMOS and the method for forming thereof | Joel M. McGregor, Jeesung Jung, Ji-Hyoung Yoo | 2018-02-13 |
| 9892787 | Multi-time programmable non-volatile memory cell and associated circuits | Da Chen | 2018-02-13 |
| 9893518 | ESD protection circuit with false triggering prevention | — | 2018-02-13 |
| 9595952 | Switching circuit and the method thereof | — | 2017-03-14 |
| 9502251 | Method for fabricating low-cost isolated resurf LDMOS and associated BCD manufacturing process | Joel M. McGregor, Jeesung Jung, Ji-Hyoung Yoo | 2016-11-22 |
| 9450052 | EEPROM memory cell with a coupler region and method of making the same | Albert Bergemont, Joel M. McGregor | 2016-09-20 |
| 9245647 | One-time programmable memory cell and circuit | Da Chen | 2016-01-26 |
| 8922963 | Electrostatic discharge protection circuit and method thereof | — | 2014-12-30 |
| 6646490 | Bipolar breakdown enhancement circuit for tri-state output stage | — | 2003-11-11 |