Issued Patents All Time
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12369350 | Silicon carbide semiconductor device with a main cell outputting main current and a sense cell outputting sense current wherein the inclination of temperature dependent properties of the main current is approximately flat in a temperature of 0 *C or less | — | 2025-07-22 |
| 11088073 | Semiconductor device | Yoshinori Matsuno, Toshikazu Tanioka, Yasunori Oritsuki, Naochika Hanano | 2021-08-10 |
| 10950435 | SiC epitaxial wafer, method for manufacturing SiC epitaxial wafer, SiC device, and power conversion apparatus | Akihito Ohno, Takuma Mizobe, Yasuhiro Kimura, Yoichiro Mitani | 2021-03-16 |
| 10711372 | Silicon carbide epitaxial wafer manufacturing method, silicon carbide semiconductor device manufacturing method and silicon carbide epitaxial wafer manufacturing apparatus | Akihito Ohno, Takashi Kanazawa | 2020-07-14 |
| 10707075 | Semiconductor wafer, semiconductor device, and method for producing semiconductor device | Akihito Ohno, Takuma Mizobe, Masashi Sakai, Yasuhiro Kimura, Yoichiro Mitani +1 more | 2020-07-07 |
| 10508362 | Substrate mounting member, wafer plate, and SiC epitaxial substrate manufacturing method | Hiroaki Sumitani | 2019-12-17 |
| 10370775 | Silicon carbide epitaxial wafer manufacturing method, silicon carbide semiconductor device manufacturing method and silicon carbide epitaxial wafer manufacturing apparatus | Akihito Ohno, Takashi Kanazawa | 2019-08-06 |
| 10229830 | Method of manufacturing silicon carbide epitaxial wafer | Ryo Hattori, Takuyo Nakamura | 2019-03-12 |
| 9988738 | Method for manufacturing SiC epitaxial wafer | Nobuyuki Tomita, Yoichiro Mitani, Takanori Tanaka, Naoyuki KAWABATA, Yoshihiko Toyoda +4 more | 2018-06-05 |
| 9957638 | Method for manufacturing silicon carbide semiconductor device | Akihito Ohno, Yoichiro Mitani, Takahiro Yamamoto, Nobuyuki Tomita | 2018-05-01 |
| 9903048 | Single-crystal 4H-SiC substrate | Akihito Ohno, Zempei Kawazu, Nobuyuki Tomita, Takanori Tanaka, Yoichiro Mitani | 2018-02-27 |
| 9752254 | Method for manufacturing a single-crystal 4H—SiC substrate | Akihito Ohno, Zempei Kawazu, Nobuyuki Tomita, Takanori Tanaka, Yoichiro Mitani | 2017-09-05 |
| 9422640 | Single-crystal 4H-SiC substrate | Akihito Ohno, Zempei Kawazu, Nobuyuki Tomita, Takanori Tanaka, Yoichiro Mitani | 2016-08-23 |
| 9400172 | Film thickness measurement method | Ryo Hattori | 2016-07-26 |
| 8679952 | Method of manufacturing silicon carbide epitaxial wafer | Nobuyuki Tomita, Masayoshi Tarutani, Yoichiro Mitani, Takeharu Kuroiwa, Masayuki Imaizumi +5 more | 2014-03-25 |
| 8569106 | Method for manufacturing silicon carbide semiconductor device | Kenichi Ohtsuka, Nobuyuki Tomita, Masayoshi Tarutani | 2013-10-29 |