Issued Patents All Time
Showing 26–49 of 49 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10720446 | Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus | Justin B. Dorhout, Fei Wang, Chet E. Carter, Ian C. Laboriante, John D. Hopkins +5 more | 2020-07-21 |
| 10665469 | Arrays of elevationally-extending strings of memory cells and methods used in forming an array of elevationally-extending strings of memory cells | John D. Hopkins, Gordon A. Haller, Tom J. John, Anish A. Khandekar, Christopher J. Larsen | 2020-05-26 |
| 10615174 | Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials | Fei Wang, Tom J. John, Anish A. Khandekar, Aaron R. Wilson, John D. Hopkins +1 more | 2020-04-07 |
| 10600682 | Semiconductor devices including a stair step structure, and related methods | John B. Matovu, David S. Meyaard, Gowrisankar Damarla, Sri Sai Sivakumar Vegunta, Shashank Saraf +7 more | 2020-03-24 |
| 10586807 | Arrays of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stacks | Zhiqiang Xie, Chris M. Carlson, Justin B. Dorhout, Anish A. Khandekar, Greg Light +3 more | 2020-03-10 |
| 10580792 | Integrated structures and methods of forming integrated structures | Jie Li, James Mathew, Luan C. Tran, Gordon A. Haller, Yangda Zhang +2 more | 2020-03-03 |
| 10559466 | Methods of forming a channel region of a transistor and methods used in forming a memory array | David H. Wells, Anish A. Khandekar, Jie Li | 2020-02-11 |
| 10483407 | Methods of forming si3nX, methods of forming insulator material between a control gate and charge-storage material of a programmable charge-storage transistor, and methods of forming an array of elevationally-extending strings of memory cells and a programmable charge-storage transistor manufactured in accordance with methods | Fei Wang, Jeffery B. Hull, Anish A. Khandekar, Duo Mao, Zhixin Xu +3 more | 2019-11-19 |
| 10388665 | Methods of forming an array of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stack | Zhiqiang Xie, Chris M. Carlson, Justin B. Dorhout, Anish A. Khandekar, Greg Light +3 more | 2019-08-20 |
| 10381377 | Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials | Fei Wang, Tom J. John, Anish A. Khandekar, Aaron R. Wilson, John D. Hopkins +1 more | 2019-08-13 |
| 10381367 | Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon | Dimitrios Pavlopoulos, Anish A. Khandekar | 2019-08-13 |
| 10304749 | Method and apparatus for improved etch stop layer or hard mask layer of a memory device | Christopher W. Petz, Philip M. Campbell, Wei Yeeng Ng, Saurabh Keshav, John Mark Meldrim +2 more | 2019-05-28 |
| 10297611 | Transistors and arrays of elevationally-extending strings of memory cells | David H. Wells, Luan C. Tran, Jie Li, Anish A. Khandekar | 2019-05-21 |
| 10269625 | Methods of forming semiconductor structures having stair step structures | John B. Matovu, David S. Meyaard, Gowrisankar Damarla, Sri Sai Sivakumar Vegunta, Shashank Saraf +7 more | 2019-04-23 |
| 10217755 | Flash memory cells, components, and methods | Changhan Kim, John D. Hopkins, Darwin Franseda Fan | 2019-02-26 |
| 10157933 | Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus | Justin B. Dorhout, Fei Wang, Chet E. Carter, Ian C. Laboriante, John D. Hopkins +5 more | 2018-12-18 |
| 10121799 | Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials | Fei Wang, Tom J. John, Anish A. Khandekar, Aaron R. Wilson, John D. Hopkins +1 more | 2018-11-06 |
| 10096610 | Polysilicon doping controlled 3D NAND etching | John D. Hopkins, Younghee Kim, Jie Li, Yu YUWEN, Ramey M. Abdelrahaman | 2018-10-09 |
| 10083984 | Integrated structures and methods of forming integrated structures | Jie Li, James Mathew, Luan C. Tran, Gordon A. Haller, Yangda Zhang +2 more | 2018-09-25 |
| 10014311 | Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon | Dimitrios Pavlopoulos, Anish A. Khandekar | 2018-07-03 |
| 9893083 | Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials | Fei Wang, Tom J. John, Anish A. Khandekar, Aaron R. Wilson, John D. Hopkins +1 more | 2018-02-13 |
| 9773805 | Integrated structures and methods of forming integrated structures | Jie Li, James Mathew, Luan C. Tran, Gordon A. Haller, Yangda Zhang +2 more | 2017-09-26 |
| 9153455 | Methods of forming semiconductor device structures, memory cells, and arrays | Christopher J. Larsen, David Daycock | 2015-10-06 |
| 9064692 | DRAM cells and methods of forming silicon dioxide | Shivani Srivastava, Fawad Ahmed | 2015-06-23 |