Issued Patents All Time
Showing 176–189 of 189 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5416048 | Method to slope conductor profile prior to dielectric deposition to improve dielectric step-coverage | Trung T. Doan | 1995-05-16 |
| 5378648 | Situ stringer removal during polysilicon capacitor cell plate delineation | Audrey P. Lin | 1995-01-03 |
| 5346585 | Use of a faceted etch process to eliminate stringers | Trung T. Doan | 1994-09-13 |
| 5328557 | Plasma treatment of O-rings | — | 1994-07-12 |
| 5320981 | High accuracy via formation for semiconductor devices | — | 1994-06-14 |
| 5300801 | Stacked capacitor construction | Phillip G. Wald | 1994-04-05 |
| 5286344 | Process for selectively etching a layer of silicon dioxide on an underlying stop layer of silicon nitride | David S. Becker, Fred L. Roe | 1994-02-15 |
| 5259924 | Integrated circuit fabrication process to reduce critical dimension loss during etching | Viju K. Mathews, Ardavan Niroomand, Pierre C. Fazan | 1993-11-09 |
| 5256245 | Use of a clean up step to form more vertical profiles of polycrystalline silicon sidewalls during the manufacture of a semiconductor device | David J. Keller | 1993-10-26 |
| 5252517 | Method of conductor isolation from a conductive contact plug | David S. Becker | 1993-10-12 |
| 5238862 | Method of forming a stacked capacitor with striated electrode | Phillip G. Wald | 1993-08-24 |
| 5229326 | Method for making electrical contact with an active area through sub-micron contact openings and a semiconductor device | Charles H. Dennison | 1993-07-20 |
| 5223730 | Stacked-trench dram cell that eliminates the problem of phosphorus diffusion into access transistor channel regions | Howard E. Rhodes | 1993-06-29 |
| 5213659 | Combination usage of noble gases for dry etching semiconductor wafers | Scott Alan Ludwig | 1993-05-25 |