Issued Patents All Time
Showing 101–125 of 159 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10395718 | Charge mirror-based sensing for ferroelectric memory | Xinwei Guo | 2019-08-27 |
| 10395697 | Self-referencing sensing schemes with coupling capacitance | Mahdi Jamali, William A. Melton, Xinwei Guo, Yasuko Hattori | 2019-08-27 |
| 10388351 | Wear leveling for random access and ferroelectric memory | Richard E. Fackenthal, Duane R. Mills | 2019-08-20 |
| 10388361 | Differential amplifier schemes for sensing memory cells | Stefan Frederik Schippers, Xinwei Guo | 2019-08-20 |
| 10290341 | Self-reference for ferroelectric memory | — | 2019-05-14 |
| 10248592 | Interrupted write operation in a serial interface memory with a portion of a memory address | Graziano Mirichigni | 2019-04-02 |
| 10192606 | Charge extraction from ferroelectric memory cell using sense capacitors | — | 2019-01-29 |
| 10170173 | Charge mirror-based sensing for ferroelectric memory | Xinwei Guo | 2019-01-01 |
| 10163481 | Offset cancellation for latching in a memory device | — | 2018-12-25 |
| 10163482 | Ground reference scheme for a memory cell | Scott J. Derner, Umberto Di Vincenzo, Christopher John Kawamura, Eric Carman | 2018-12-25 |
| 10153020 | Dual mode ferroelectric memory cell operation | — | 2018-12-11 |
| 10121526 | Redundancy array column decoder for memory | Xinwei Guo | 2018-11-06 |
| 10083731 | Memory cell sensing with storage component isolation | — | 2018-09-25 |
| 10083744 | Memory device with reduced neighbor memory cell disturbance | Efrem Bolandrina | 2018-09-25 |
| 9934837 | Ground reference scheme for a memory cell | Scott J. Derner, Umberto Di Vincenzo, Christopher John Kawamura, Eric Carman | 2018-04-03 |
| 9886991 | Techniques for sensing logic values stored in memory cells using sense amplifiers that are selectively isolated from digit lines | Duane R. Mills | 2018-02-06 |
| 9881661 | Charge mirror-based sensing for ferroelectric memory | Xinwei Guo | 2018-01-30 |
| 9858978 | Offset compensation for ferroelectric memory cell sensing | — | 2018-01-02 |
| 9779796 | Redundancy array column decoder for memory | Xinwei Guo | 2017-10-03 |
| 9767898 | Memory device with reduced neighbor memory cell disturbance | Efrem Bolandrina | 2017-09-19 |
| 9767857 | Apparatus and methods to perform read-while write (RWW) operations | Gerald Barkley, Pierguido Garofalo | 2017-09-19 |
| 9577611 | Controlling clock input buffers | Daniele Balluchi, Graziano Mirichigni | 2017-02-21 |
| 9576654 | Apparatuses, sense circuits, and methods for compensating for a wordline voltage increase | Riccardo Muzzetto | 2017-02-21 |
| 9552864 | Offset compensation for ferroelectric memory cell sensing | — | 2017-01-24 |
| 9442867 | Interrupted write memory operation in a serial interface memory with a portion of a memory address | Graziano Mirichigni | 2016-09-13 |