Issued Patents All Time
Showing 1–18 of 18 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6355541 | Method for transfer of thin-film of silicon carbide via implantation and wafer bonding | Orin W. Holland, Darrell Keith Thomas, Richard B. Gregory, Thomas A. Wetteroth | 2002-03-12 |
| 6180495 | Silicon carbide transistor and method therefor | Charles E. Weitzel, Mohit K. Bhatnagar, Karen E. Moore, Thomas A. Wetteroth | 2001-01-30 |
| 5933750 | Method of fabricating a semiconductor device with a thinned substrate | Charles E. Weitzel, Mohit K. Bhatnagar, Karen E. Moore, Thomas A. Wetteroth | 1999-08-03 |
| 5753560 | Method for fabricating a semiconductor device using lateral gettering | Stella Q. Hong, Thomas A. Wetteroth | 1998-05-19 |
| 5700721 | Structure and method for metallization of semiconductor devices | Hank Hukyoo Shin, Clarence J. Tracy, Robert L. Duffin, John L. Freeman, Jr., Gordon M. Grivna | 1997-12-23 |
| 5554889 | Structure and method for metallization of semiconductor devices | Hank Hukyoo Shin, Clarence J. Tracy, Robert L. Duffin, John L. Freeman, Jr., Gordon M. Grivna | 1996-09-10 |
| 5424245 | Method of forming vias through two-sided substrate | Richard W. Gurtler, Jeffrey Pearse | 1995-06-13 |
| 5217920 | Method of forming substrate contact trenches and isolation trenches using anodization for isolation | Robert J. Mattox, Paul Proctor | 1993-06-08 |
| 5112772 | Method of fabricating a trench structure | Han-Bin K. Liang, Thomas E. Zirkle, Yee-Chaung See | 1992-05-12 |
| 4943539 | Process for making a multilayer metallization structure | James Sellers, Robert J. Mattox | 1990-07-24 |
| 4799392 | Method for determining silicon (mass 28) beam purity prior to implantation of gallium arsenide | Robert P. Lorigan, Richard L. Peterson | 1989-01-24 |
| H569 | Charge storage depletion region discharge protection | Charles J. Varker | 1989-01-03 |
| 4740481 | Method of preventing hillock formation in polysilicon layer by oxygen implanation | Richard B. Gregory, Charles J. Varker | 1988-04-26 |
| 4732866 | Method for producing low noise, high grade constant semiconductor junctions | Jerry L. Chruma, William Gandy, Tommie R. Huffman | 1988-03-22 |
| 4717588 | Metal redistribution by rapid thermal processing | Wayne M. Paulson, Charles J. Varker | 1988-01-05 |
| 4683637 | Forming depthwise isolation by selective oxygen/nitrogen deep implant and reaction annealing | Charles J. Varker, Marie E. Burnham | 1987-08-04 |
| 4682407 | Means and method for stabilizing polycrystalline semiconductor layers | Richard B. Gregory, Charles J. Varker | 1987-07-28 |
| 4621413 | Fabricating a semiconductor device with reduced gate leakage | Arthur T. Lowe, Schyi-yi Wu | 1986-11-11 |