Issued Patents All Time
Showing 101–125 of 144 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11621391 | Antiferromagnet based spin orbit torque memory device | Chia-Ching Lin, Sasikanth Manipatruni, Dmitri E. Nikonov, Kaan Oguz, Ian A. Young | 2023-04-04 |
| 11605411 | Method of forming stacked ferroelectric planar capacitors in a memory bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more | 2023-03-14 |
| 11605624 | Ferroelectric resonator | Chia-Ching Lin, Raseong Kim, Ashish Verma Penumatcha, Uygar E. Avci, Ian A. Young | 2023-03-14 |
| 11594673 | Two terminal spin orbit memory devices and methods of fabrication | Noriyuki Sato, Angeline Smith, Sasikanth Manipatruni, Kaan Oguz, Kevin P. O'Brien +8 more | 2023-02-28 |
| 11594270 | Perpendicular spin injection via spatial modulation of spin orbit coupling | Sasikanth Manipatruni, Chia-Ching Lin, Dmitri E. Nikonov, Christopher J. Wiegand, Ian A. Young | 2023-02-28 |
| 11594624 | Transistor structures formed with 2DEG at complex oxide interfaces | Sasikanth Manipatruni, Dmitri E. Nikonov, Chia-Ching Lin, Uygar E. Avci, Ian A. Young | 2023-02-28 |
| 11574666 | Spin orbit torque memory devices and methods of fabrication | Sasikanth Manipatruni, Chia-Ching Lin, Kaan Oguz, Ian A. Young | 2023-02-07 |
| 11575083 | Insertion layer between spin hall effect or spin orbit torque electrode and free magnet for improved magnetic memory | Sasikanth Manipatruni, Kaan Oguz, Ian A. Young, Dmitri E. Nikonov, Chia-Ching Lin | 2023-02-07 |
| 11557717 | Transition metal dichalcogenide based spin orbit torque memory device with magnetic insulator | Chia-Ching Lin, Sasikanth Manipatruni, Dmitri E. Nikonov, Ian A. Young | 2023-01-17 |
| 11557629 | Spin orbit memory devices with reduced magnetic moment and methods of fabrication | Kaan Oguz, Christopher J. Wiegand, Noriyuki Sato, Angeline Smith | 2023-01-17 |
| 11545204 | Non-linear polar material based memory bit-cell with multi-level storage by applying different voltage levels | Rajeev Kumar Dokania, Noriyuki Sato, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more | 2023-01-03 |
| 11532635 | High-density low voltage multi-element ferroelectric gain memory bit-cell with pillar capacitors | Rajeev Kumar Dokania, Noriyuki Sato, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more | 2022-12-20 |
| 11532342 | Non-linear polar material based differential multi-memory element bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more | 2022-12-20 |
| 11527278 | Non-linear polar material based memory bit-cell with multi-level storage by applying different time pulse widths | Rajeev Kumar Dokania, Noriyuki Sato, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more | 2022-12-13 |
| 11527277 | High-density low voltage ferroelectric memory bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more | 2022-12-13 |
| 11521667 | Stacked ferroelectric planar capacitors in a memory bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more | 2022-12-06 |
| 11521666 | High-density low voltage multi-element ferroelectric gain memory bit-cell with planar capacitors | Rajeev Kumar Dokania, Noriyuki Sato, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more | 2022-12-06 |
| 11514966 | Non-linear polar material based multi-memory element bit-cell with multi-level storage | Rajeev Kumar Dokania, Noriyuki Sato, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more | 2022-11-29 |
| 11514967 | Non-linear polar material based differential multi-memory element gain bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more | 2022-11-29 |
| 11508903 | Spin orbit torque device with insertion layer between spin orbit torque electrode and free layer for improved performance | Angeline Smith, Ian A. Young, Kaan Oguz, Sasikanth Manipatruni, Christopher J. Wiegand +4 more | 2022-11-22 |
| 11502188 | Apparatus and method for boosting signal in magnetoelectric spin orbit logic | Chia-Ching Lin, Sasikanth Manipatruni, Dmitri E. Nikonov, Ian A. Young, Benjamin Buford +2 more | 2022-11-15 |
| 11501813 | Method of forming stacked ferroelectric non- planar capacitors in a memory bit-cell | Rajeev Kumar Dokania, Noriyuki Sato, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more | 2022-11-15 |
| 11476412 | Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memory | Sasikanth Manipatruni, Kaan Oguz, Noriyuki Sato, Kevin P. O'Brien, Benjamin Buford +4 more | 2022-10-18 |
| 11444237 | Spin orbit torque (SOT) memory devices and methods of fabrication | Noriyuki Sato, Gary Allen, Sasikanth Manipatruni, Kaan Oguz, Kevin P. O'Brien +5 more | 2022-09-13 |
| 11430942 | Multilayer free magnetic layer structure for spin-based magnetic memory | Kaan Oguz, Sasikanth Manipatruni, Chia-Ching Lin, Gary Allen | 2022-08-30 |