Issued Patents All Time
Showing 176–191 of 191 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5397723 | Process for forming arrayed field effect transistors highly integrated on substrate | Masaki Momodomi, Ryozo Nakayama, Seiichi Aritome, Ryouhei Kirisawa, Tetsuro Endoh +1 more | 1995-03-14 |
| 5394372 | Semiconductor memory device having charge-pump system with improved oscillation means | Tomoharu Tanaka | 1995-02-28 |
| 5386422 | Electrically erasable and programmable non-volatile memory system with write-verify controller using two reference levels | Tetsuo Endoh, Kazunori Ohuchi, Ryouhei Kirisawa, Seiichi Aritome, Tomoharu Tanaka +1 more | 1995-01-31 |
| 5361227 | Non-volatile semiconductor memory device and memory system using the same | Tomoharu Tanaka, Masaki Momodomi, Hideo Kato, Hiroto Nakai, Yoshiyuki Tanaka +8 more | 1994-11-01 |
| 5355332 | Electrically erasable programmable read-only memory with an array of one-transistor memory cells | Tetsuo Endoh | 1994-10-11 |
| 5323039 | Non-volatile semiconductor memory and method of manufacturing the same | Masamichi Asano, Hiroshi Iwahashi, Ryouhei Kirisawa, Ryozo Nakayama, Satoshi Inoue +2 more | 1994-06-21 |
| 5321699 | Electrically erasable and programmable non-volatile memory system with write-verify controller using two reference levels | Tetsuo Endoh, Kazunori Ohuchi, Ryouhei Kirisawa, Seiichi Aritome, Tomoharu Tanaka +1 more | 1994-06-14 |
| 5293337 | Electrically erasable programmable read-only memory with electric field decreasing controller | Seiichi Aritome, Ryouhei Kirisawa, Yoshihisa Iwata, Masaki Momodomi | 1994-03-08 |
| 5179427 | Non-volatile semiconductor memory device with voltage stabilizing electrode | Ryozo Nakayama, Yasuo Itoh, Ryouhei Kirisawa, Hideko Odaira, Masaki Momodomi +5 more | 1993-01-12 |
| 5172198 | MOS type semiconductor device | Seiichi Aritome | 1992-12-15 |
| 5088060 | Electrically erasable programmable read-only memory with NAND memory cell structure | Tetsuo Endoh, Masaki Momodomi, Tomoharu Tanaka, Fujio Masuoka, Shigeyoshi Watanabe | 1992-02-11 |
| 5050125 | Electrically erasable programmable read-only memory with NAND cellstructure | Masaki Momodomi, Koichi Toita, Yasuo Itoh, Yoshihisa Iwata, Fujio Masuoka +3 more | 1991-09-17 |
| 5031011 | MOS type semiconductor device | Seiichi Aritome | 1991-07-09 |
| 4996669 | Electrically erasable programmable read-only memory with NAND memory cell structure | Tetsuo Endoh, Masaki Momodomi, Tomoharu Tanaka, Fujio Masuoka, Shigeyoshi Watanabe | 1991-02-26 |
| 4959812 | Electrically erasable programmable read-only memory with NAND cell structure | Masaki Momodomi, Fujio Masuoka, Yasuo Itoh, Kazunori Ohuchi, Ryouhei Kirisawa | 1990-09-25 |
| 4939690 | Electrically erasable programmable read-only memory with NAND cell structure that suppresses memory cell threshold voltage variation | Masaki Momodomi, Yasuo Itoh, Satoshi Inoue, Fujio Masuoka, Ryozo Nakayama +1 more | 1990-07-03 |