RS

Riichiro Shirota

KT Kabushiki Kaisha Toshiba: 155 patents #33 of 21,451Top 1%
UM United Microelectronics: 11 patents #537 of 4,560Top 15%
UN Unknown: 6 patents #2,010 of 83,584Top 3%
PT Powerchip Technology: 4 patents #10 of 138Top 8%
UP Unisantis Electronics Singapore Pte.: 4 patents #14 of 31Top 50%
Toshiba Memory: 2 patents #853 of 1,971Top 45%
PE Phison Electronics: 2 patents #111 of 344Top 35%
Kioxia: 1 patents #1,054 of 1,813Top 60%
Overall (All Time): #3,710 of 4,157,543Top 1%
191
Patents All Time

Issued Patents All Time

Showing 151–175 of 191 patents

Patent #TitleCo-InventorsDate
6014330 Non-volatile semiconductor memory device Tetsuo Endoh, Yoshiyuki Tanaka, Seiichi Aritome, Susumu Shuto, Tomoharu Tanaka +2 more 2000-01-11
5978265 Non-volatile semiconductor memory device with nand type memory cell arrays Ryouhei Kirisawa, Ryozo Nakayama, Seiichi Aritome, Masaki Momodomi, Yasuo Itoh +1 more 1999-11-02
5946231 Non-volatile semiconductor memory device Tetsuo Endoh, Yoshiyuki Tanaka, Seiichi Aritome, Susumu Shuto, Tomoharu Tanaka +2 more 1999-08-31
5933436 Error correction/detection circuit and semiconductor memory device using the same Toru Tanzawa, Tomoharu Tanaka, Kazunori Ohuchi 1999-08-03
5909399 Non-volatile semiconductor memory device and memory system using the same Tomoharu Tanaka, Masaki Momodomi, Hideo Kato, Hiroto Nakai, Yoshiyuki Tanaka +8 more 1999-06-01
5824583 Non-volatile semiconductor memory and method of manufacturing the same Masamichi Asano, Hiroshi Iwahashi, Ryouhei Kirisawa, Ryozo Nakayama, Satoshi Inoue +2 more 1998-10-20
5818791 Non-volatile semiconductor memory device and memory system using the same Tomoharu Tanaka, Masaki Momodomi, Hideo Kato, Hiroto Nakai, Yoshiyuki Tanaka +8 more 1998-10-06
5793696 Non-volatile semiconductor memory device and memory system using the same Tomoharu Tanaka, Masaki Momodomi, Hideo Kato, Hiroto Nakai, Yoshiyuki Tanaka +8 more 1998-08-11
RE35838 Electrically erasable programmable read-only memory with NAND cell structure Masaki Momodomi, Fujio Masuoka, Yasuo Itoh, Kazunori Ohuchi, Ryouhei Kirisawa 1998-07-07
5774397 Non-volatile semiconductor memory device and method of programming a non-volatile memory cell to a predetermined state Tetsuo Endoh, Yoshiyuki Tanaka, Seiichi Aritome, Susumu Shuto, Tomoharu Tanaka +2 more 1998-06-30
5724300 Non-volatile semiconductor memory device and memory system using the same Tomoharu Tanaka, Masaki Momodomi, Hideo Kato, Hiroto Nakai, Yoshiyuki Tanaka +8 more 1998-03-03
5615165 Non-volatile semiconductor memory device and memory system using the same Tomoharu Tanaka, Masaki Momodomi, Hideo Kato, Hiroto Nakai, Yoshiyuki Tanaka +8 more 1997-03-25
5602789 Electrically erasable and programmable non-volatile and multi-level memory systemn with write-verify controller Tetsuo Endoh, Kazunori Ohuchi, Ryouhei Kirisawa, Seiichi Aritome, Tomoharu Tanaka +1 more 1997-02-11
5597748 Method of manufacturing NAND type EEPROM Masamichi Asano, Hiroshi Iwahashi, Ryouhei Kirisawa, Ryozo Nakayama, Satoshi Inoue +2 more 1997-01-28
5596523 Electrically erasable programmable read-only memory with an array of one-transistor memory cells Tetsuo Endoh 1997-01-21
5555204 Non-volatile semiconductor memory device Tetsuo Endoh, Yoshiyuki Tanaka, Seiichi Aritome, Susumu Shuto, Tomoharu Tanaka +2 more 1996-09-10
5546351 Non-volatile semiconductor memory device and memory system using the same Tomoharu Tanaka, Masaki Momodomi, Hideo Kato, Hiroto Nakai, Yoshiyuki Tanaka +8 more 1996-08-13
5528547 Electrically erasable programmable read-only memory with electric field decreasing controller Seiichi Aritome, Ryouhei Kirisawa, Yoshihisa Iwata, Masaki Momodomi 1996-06-18
5515327 Nonvolatile semiconductor memory device having a small number of internal boosting circuits Naohiro Matsukawa, Ryouhei Kirisawa 1996-05-07
5508957 Non-volatile semiconductor memory with NAND cell structure and switching transistors with different channel lengths to reduce punch-through Masaki Momodomi, Fujio Masuoka, Yasuo Itoh, Hiroshi Iwahashi, Yoshihisa Iwata +6 more 1996-04-16
5483484 Electrically erasable programmable read-only memory with an array of one-transistor memory cells Tetsuo Endoh 1996-01-09
5469444 Electrically erasable and programmable non-volatile memory system with write-verify controller using two reference levels Tetsuo Endoh, Kazunori Ohuchi, Ryouhei Kirisawa, Seiichi Aritome, Tomoharu Tanaka +1 more 1995-11-21
5453955 Non-volatile semiconductor memory device Koji Sakui, Hiroshi Nakamura, Masaki Momodomi, Fujio Masuoka 1995-09-26
5440509 Electrically erasable programmable read-only memory with NAND cell structure and intermediate level voltages initially applied to bit lines Masaki Momodomi, Koichi Toita, Yasuo Itoh, Yoshihisa Iwata, Fujio Masuoka +3 more 1995-08-08
5402373 Electrically erasable programmable read-only memory with electric field decreasing controller Seiichi Aritome, Ryouhei Kirisawa, Yoshihisa Iwata, Masaki Momodomi 1995-03-28