TF

Takao Fujikawa

KS Kobe Steel: 37 patents #1 of 2,031Top 1%
KS Kobe Steel: 5 patents #293 of 1,773Top 20%
NG Nihon Shinku Gijutsu: 2 patents #29 of 128Top 25%
MC Marin Bio Co.: 1 patents #3 of 10Top 30%
MS Mitsubishi Materials Silicon: 1 patents #58 of 116Top 50%
UL Ulvac: 1 patents #339 of 680Top 50%
Overall (All Time): #68,339 of 4,157,543Top 2%
44
Patents All Time

Issued Patents All Time

Showing 1–25 of 44 patents

Patent #TitleCo-InventorsDate
8652370 Hot isostatic pressing method and apparatus Tomomitsu Nakai, Makoto Yoneda, Shigeo Kofune, Yoshihiko Sakashita, Masahiko Mitsuda 2014-02-18
7011510 Hot isostatic pressing apparatus and hot isostatic pressing method Tomomitsu Nakai, Makoto Yoneda, Shigeo Kofune 2006-03-14
7008210 Hot isostatic pressing apparatus Yasuo Manabe, Shigeo Kofune, Makoto Yoneda 2006-03-07
6991370 Temperature measuring apparatus of high melting point metal carbide-carbon system material thermocouple type, and method for producing the apparatus Shigeo Kofune 2006-01-31
6916735 Method for forming aerial metallic wiring on semiconductor substrate Tetsuya Yoshikawa 2005-07-12
6837086 Hot isostatic pressing method and apparatus Yasuo Manabe, Shigeo Kofune, Makoto Yoneda 2005-01-04
6790774 Method of forming a wiring film by applying high temperature/high pressure Makoto Kadoguchi, Kohei Suzuki, Takuya Masui 2004-09-14
6733592 High-temperature and high-pressure treatment device Yoichi Inoue, Yutaka Narukawa, Takahiko Ishii, Tsuneharu Masuda, Makoto Kadoguchi +1 more 2004-05-11
6491518 Apparatus for high-temperature and high-pressure treatment Takahiko Ishii, Yutaka Narukawa, Makoto Kadoguchi 2002-12-10
6451682 Method of forming interconnect film Makoto Kadoguchi, Kohei Suzuki, Yasushi Mizusawa, Tomoyasu Kondou, Yoji Taguchi 2002-09-17
6447600 Method of removing defects of single crystal material and single crystal material from which defects are removed by the method Jun Furukawa, Mitsuru Sudou, Tetsuya Nakai, Takuya Masui 2002-09-10
6328560 Pressure processing apparatus for semiconductors Takahiko Ishii, Tsuneharu Masuda, Makoto Kadoguchi, Yutaka Narukawa 2001-12-11
6323120 Method of forming a wiring film Yutaka Narukawa, Kohei Suzuki, Takuya Masui 2001-11-27
6299739 Method of forming metal wiring film Takahiko Ishii, Yutaka Narukawa, Makoto Kadoguchi, Yasushi Mizusawa, Tomoyasu Kondou +1 more 2001-10-09
6285010 Method and device for high-temperature, high-pressure treatment of semiconductor wafer Yutaka Narukawa, Tsuneharu Masuda, Makoto Kadoguchi 2001-09-04
6221743 Method for processing substrate Yutaka Narukawa, Itaru Masuoka, Kohei Suzuki 2001-04-24
6077053 Piston type gas compressor Takahiro Yuki, Yoshihiko Sakashita, Yutaka Narukawa, Itaru Masuoka 2000-06-20
5979306 Heating pressure processing apparatus Yutaka Narukawa, Itaru Masuoka, Takahiro Yuki, Yoshihiko Sakashita 1999-11-09
5898727 High-temperature high-pressure gas processing apparatus Takahiko Ishii, Tomomitsu Nakai, Yoshihiko Sakashita 1999-04-27
5798126 Sealing device for high pressure vessel Noriaki Nakai 1998-08-25
5792271 System for supplying high-pressure medium gas Takahiko Ishii, Tomomitsu Nakai, Yoshihiko Sakashita 1998-08-11
5698029 Vertical furnace for the growth of single crystals Katsuhiro Uehara, Yoshihiko Sakashita, Hiroshi Okada, Takao Kawanaka 1997-12-16
5685907 Apparatus for preparing compound single crystals Katsuhiro Uehara, Yoshihiko Sakashita, Kazuya Suzuki, Hiroshi Okada, Takao Kawanaka +1 more 1997-11-11
5665291 Method for producing high density sintered silicon nitride(Si.sub.3 N.sub.4 ) Katuhiko Honma, Tsuneo Tatsuno, Hiroshi Okada, Masato Moritoki 1997-09-09
5603876 Method for producing high density sintered silicon nitride (SI.sub.3 N.sub. 4 Katuhiko Honma, Tsuneo Tatsuno, Hiroshi Okada, Masato Moritoki 1997-02-18