Issued Patents All Time
Showing 1–25 of 25 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9818742 | Semiconductor device isolation using an aligned diffusion and polysilicon field plate | — | 2017-11-14 |
| 8536659 | Semiconductor device with integrated channel stop and body contact | Gregory Michaelson | 2013-09-17 |
| 7427514 | Passivated magneto-resistive bit structure and passivation method therefor | Harry Hongyue Liu, Lonny Berg, Shaoping Li, Theodore Zhu, Joel Drewes | 2008-09-23 |
| 7169679 | Varactor with improved tuning range | Cheisan Yue, Mohammed A. Fathimulla, Eric E. Vogt | 2007-01-30 |
| 7029923 | Method for manufacture of magneto-resistive bit structure | Harry Hongyue Liu, Lonny Berg, Theodore Zhu, Shaoping Li, Romney R. Katti +2 more | 2006-04-18 |
| 6992918 | Methods of increasing write selectivity in an MRAM | Shaoping Li, Theodore Zhu, Anthony Arrott, Harry Hongyue Liu, Yong Lu | 2006-01-31 |
| 6872997 | Method for manufacture of magneto-resistive bit structure | Harry Hongyue Liu, Lonny Berg, Theodore Zhu, Shaoping Li, Romney R. Katti +2 more | 2005-03-29 |
| 6806546 | Passivated magneto-resistive bit structure | Harry Hongyue Liu, Lonny Berg, Shaoping Li, Theodore Zhu, Joel Drewes | 2004-10-19 |
| 6791856 | Methods of increasing write selectivity in an MRAM | Shaoping Li, Theodore Zhu, Anthony Arrott, Harry Hongyue Liu, Yong Lu | 2004-09-14 |
| 6756240 | Methods of increasing write selectivity in an MRAM | Shaoping Li, Theodore Zhu, Anthony Arrott, Harry Hongyue Liu, Yong Lu | 2004-06-29 |
| 6717194 | Magneto-resistive bit structure and method of manufacture therefor | Harry Hongyue Liu, Lonny Berg, Theodore Zhu, Shaoping Li, Romney R. Katti +2 more | 2004-04-06 |
| 6623987 | Passivated magneto-resistive bit structure and passivation method therefor | Harry Hongyue Liu, Lonny Berg, Shaoping Li, Theodore Zhu, Joel Drewes | 2003-09-23 |
| 6522574 | MRAM architectures for increased write selectivity | Shaoping Li, Theodore Zhu, Anthony Arrott, Harry Hongyue Liu, Yong Lu | 2003-02-18 |
| 6424561 | MRAM architecture using offset bits for increased write selectivity | Shaoping Li, Theodore Zhu, Anthony Arrott, Harry Hongyue Liu, Yong Lu | 2002-07-23 |
| 6424564 | MRAM architectures for increased write selectivity | Shaoping Li, Theodore Zhu, Anthony Arrott, Harry Hongyue Liu, Yong Lu | 2002-07-23 |
| 6392922 | Passivated magneto-resistive bit structure and passivation method therefor | Harry Hongyue Liu, Lonny Berg, Shaoping Li, Theodore Zhu, Joel Drewes | 2002-05-21 |
| 5907784 | Method of making multi-layer gate structure with different stoichiometry silicide layers | — | 1999-05-25 |
| 5821623 | Multi-layer gate structure | — | 1998-10-13 |
| 5635765 | Multi-layer gate structure | — | 1997-06-03 |
| 5580814 | Method for making a ferroelectric memory cell with a ferroelectric capacitor overlying a memory transistor | — | 1996-12-03 |
| 5495117 | Stacked ferroelectric memory cell | — | 1996-02-27 |
| 5371699 | Non-volatile ferroelectric memory with folded bit lines and method of making the same | — | 1994-12-06 |
| 5216572 | Structure and method for increasing the dielectric constant of integrated ferroelectric capacitors | Paul J. Schuele | 1993-06-01 |
| 5206788 | Series ferroelectric capacitor structure for monolithic integrated circuits and method | Thomas E. Davenport, Constance DeSmith | 1993-04-27 |
| 5005102 | Multilayer electrodes for integrated circuit capacitors | — | 1991-04-02 |