| 12040234 |
Semiconductor device and method for fabricating the same |
Yi-Fan Li, Po-Ching Su, Min-Hua Tsai, Ti-Bin Chen, Chih-Chiang Wu +1 more |
2024-07-16 |
| 8884406 |
Etch depth determination structure |
Yingying Lou, Tiesheng Li, Anup Bhalla |
2014-11-11 |
| 8471368 |
Polysilicon control etch back indicator |
Tiesheng Li, Sung-Shan Tai, Hong Chang |
2013-06-25 |
| 8193061 |
Polysilicon control etch-back indicator |
Tiesheng Li, Sung-Shan Tai, Hong Chang |
2012-06-05 |
| 8053315 |
Method to manufacture split gate with high density plasma oxide layer as inter-polysilicon insulation layer |
Sung-Shan Tai, Yong-Zhong Hu, Francois Hebert, Hong Chang, Mengyu Pan +1 more |
2011-11-08 |
| 8021563 |
Etch depth determination for SGT technology |
Yingying Lou, Tiesheng Li, Anup Bhalla |
2011-09-20 |
| 7932148 |
Processes for manufacturing MOSFET devices with excessive round-hole shielded gate trench (SGT) |
Hong Chang, Sung-Shan Tai, Tiesheng Li |
2011-04-26 |
| 7928507 |
Polysilicon control etch-back indicator |
Tiesheng Li, Sung-Shan Tai, Hong Chang |
2011-04-19 |
| 7795108 |
Resistance-based etch depth determination for SGT technology |
Tiesheng Li, Yingying Lou, Anup Bhalla |
2010-09-14 |
| 7632733 |
Polysilicon control etch-back indicator |
Tiesheng Li, Sung-Shan Tai, Hong Chang |
2009-12-15 |
| 7521332 |
Resistance-based etch depth determination for SGT technology |
Tiesheng Li, Yingying Lou, Anup Bhalla |
2009-04-21 |
| 7492005 |
Excessive round-hole shielded gate trench (SGT) MOSFET devices and manufacturing processes |
Hong Chang, Sung-Shan Tai, Tiesheng Li |
2009-02-17 |