Issued Patents All Time
Showing 1–23 of 23 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11616009 | Method of manufacturing semiconductor device with internal and external electrode | Mamoru Yamagami | 2023-03-28 |
| 11004782 | Semiconductor device with internal and external electrode and method of manufacturing | Mamoru Yamagami | 2021-05-11 |
| 10354936 | Electronic component having a heat dissipation member formed on a sealing member | Yasuhiro Fuwa | 2019-07-16 |
| 8786087 | Semiconductor device having damascene interconnection structure that prevents void formation between interconnections having transparent dielectric substrate | — | 2014-07-22 |
| 7777337 | Semiconductor device having damascene interconnection structure that prevents void formation between interconnections | — | 2010-08-17 |
| 7176577 | Semiconductor device | — | 2007-02-13 |
| 7126222 | Semiconductor device | — | 2006-10-24 |
| 6924176 | Method of manufacturing semiconductor device | Toru Yoshie, Kazuhide Abe | 2005-08-02 |
| 6780764 | Method of forming a patterned tungsten damascene interconnect | Tomoyuki Morita | 2004-08-24 |
| 6767812 | Method of forming CVD titanium film | Kazuhide Abe | 2004-07-27 |
| 6759747 | Semiconductor device having damascene interconnection structure that prevents void formation between interconnections | — | 2004-07-06 |
| 6706645 | Method of manufacturing a semiconductor device | Tomoyuki Morita | 2004-03-16 |
| 6458716 | Method of manufacturing a semiconductor device | Tomoyuki Morita | 2002-10-01 |
| 6400031 | Semiconductor device having damascene interconnection structure that prevents void formation between interconnections | — | 2002-06-04 |
| 6306762 | Semiconductor device having multi-layered metalization and method of manufacturing the same | Makiko Nakamura, Yasuhiro Fukuda, Yasuyuki Tatara, Hiroshi Onoda | 2001-10-23 |
| 5982037 | Al/Ti layered interconnection and method of forming same | Tadashi Narita | 1999-11-09 |
| 5646449 | Semiconductor device having a multi-layered conductive structure which includes an aluminum alloy layer, a high melting temperature metal layer, and a high melting temperature nitride layer | Makiko Nakamura, Yasuhiro Fukuda, Yasuyuki Tatara, Hiroshi Onoda | 1997-07-08 |
| 5332643 | Method of wet honing a support for an electrophotographic photoreceptor | Hidekazu Aonuma, Kazuyoshi Shimoyama, Yasuo Sakaguchi | 1994-07-26 |
| 5192713 | Method of manufacturing semiconductor devices having multi-layered structure | — | 1993-03-09 |
| 5166023 | Electrophotographic photoreceptor and related method | Hidekazu Aonuma | 1992-11-24 |
| 5128278 | Method of forming a wiring pattern for a semiconductor device | Hiroyuki Tanaka | 1992-07-07 |
| 5126825 | Wiring structure of a semiconductor device with beta tungsten | — | 1992-06-30 |
| 5006484 | Making a semiconductor device with contact holes having different depths | — | 1991-04-09 |