Issued Patents All Time
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12051469 | Method and apparatus to mitigate hot electron read disturbs in 3D nand devices | Wei Cao, Richard Fastow, Xin Sun, Hyungseok Kim, Narayanan Ramanan +2 more | 2024-07-30 |
| 11355199 | Method and apparatus to mitigate hot electron read disturbs in 3D NAND devices | Wei Cao, Richard Fastow, Xin Sun, Hyungseok Kim, Narayanan Ramanan +2 more | 2022-06-07 |
| 10297323 | Reducing disturbs with delayed ramp up of dummy word line after pre-charge during programming | Yingda Dong | 2019-05-21 |
| 10217762 | Doping channels of edge cells to provide uniform programming speed and reduce read disturb | Yingda Dong | 2019-02-26 |
| 10068657 | Detecting misalignment in memory array and adjusting read and verify timing parameters on sub-block and block levels | Liang Pang, Yingda Dong | 2018-09-04 |
| 10008277 | Block health monitoring using threshold voltage of dummy memory cells | Liang Pang, Yingda Dong, Nian Niles Yang | 2018-06-26 |
| 9922992 | Doping channels of edge cells to provide uniform programming speed and reduce read disturb | Yingda Dong | 2018-03-20 |
| 9922705 | Reducing select gate injection disturb at the beginning of an erase operation | Vinh Diep, Zhengyi Zhang, Yingda Dong | 2018-03-20 |
| 9922714 | Temperature dependent erase in non-volatile storage | Yingda Dong | 2018-03-20 |
| 9786378 | Equalizing erase depth in different blocks of memory cells | Zhengyi Zhang, Liang Pang, Caifu Zeng, Yingda Dong | 2017-10-10 |
| 9620233 | Word line ramping down scheme to purge residual electrons | Yingda Dong, Liang Pang | 2017-04-11 |
| 9607707 | Weak erase prior to read | Liang Pang, Yingda Dong, Jingjian Ren | 2017-03-28 |